SI7115DN-T1-GE3 MOSFET Power Electronics
High Power And Low On Resistance For Robust Power Applications
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The SI7115DN-T1-GE3 is a N-channel MOSFET designed to provide low
on-resistance, low input capacitance, and fast switching speeds. It
is capable of providing up to 11A of continuous current and is
housed in a TO-252 package. The device features a low gate-source
threshold voltage of 1.8V and a low gate charge of 4nC. It also
provides a low gate-drain capacitance of only 4pF. The device is
suitable for a wide range of applications such as power management,
switching, and voltage regulation.
Key Features:
- Low on-resistance
- Low input capacitance
- Fast switching speed
- 11A of continuous current
- TO-252 package
- Low gate-source threshold voltage of 1.8V
- Low gate charge of 4nC
- Low gate-drain capacitance of 4pF
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