SI4702-C19-GMR RF Power Transistors
Product Overview:
The SI4702-C19-GMR is a high performance RF power transistor
designed for RF power amplifier applications in industrial and
consumer applications. This device is suitable for applications
such as cellular base stations, repeaters, and consumer wireless
applications. It is designed with a high breakdown voltage of 30V,
a maximum drain current of 10.5A, and an on-state resistance of
0.065Ω.
Product Features:
• High breakdown voltage: 30V
• Maximum drain current: 10.5A
• On-state resistance: 0.065Ω
• Low gate drive voltage: 3V
• Low gate input capacitance: 44.3pF
• High power gain: 18dB
• Low thermal resistance: 0.66°C/W
• RoHS compliant
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