HMC199MS8ETR RF Power Transistor For High Gain And Efficiency
HMC199MS8ETR RF Power Transistors
Product Description:
The HMC199MS8ETR is a GaN-based RF power transistor that uses the
latest Gallium Nitride (GaN) technology. It is designed for use in
high power applications up to 2-500MHz, and provides outstanding
performance and efficiency. It has a high power gain of 28.5dB and
a maximum output power of 200W. The HMC199MS8ETR features a
high-performance thermal design that enables excellent heat
dissipation and enables operation at high power levels.
Features and Benefits:
-High power gain of 28.5dB
-Output power up to 200W
-High efficiency and outstanding performance
-High-performance thermal design
-Compact size and lightweight
-Wide frequency range of 2-500MHz
-High-temperature operation
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Offer business, service, resourcing and information for our global
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