Mosfet In Power Electronics IPB17N25S3100ATMA1 High Performance Switching Device

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Shenzhen Sai Collie Technology Co., Ltd.

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Mosfet In Power Electronics IPB17N25S3100ATMA1 High Performance Switching Device

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Mosfet In Power Electronics IPB17N25S3100ATMA1 High Performance Switching Device

Product Listing: IPB17N25S3100ATMA1 - N-Channel Enhancement Mode Field Effect Transistor Specifications: • Drain-Source Voltage (Vdss) : 100V • Gate-Source Voltage (Vgss) : ± 20V • Power Dissipation ...

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